William L (1998) Handbook of III–V heterojunction bipolar transistors. Koichi N, Osaake N, Yoshiki Y, Takumi N, Hiroshi I, Tadao I (1988) Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer. Katz A, Thomas PM, Chu SNG, Dautremont-Smith WC, Sobers RG, Napholtz SG (1990) Pt/Ti ohmic contact to p ++-InGaAsP (1.3 μm) formed by rapid thermal processing. Jung-Hui T, Ching-Sung L, Jia-Cing J, You-Ren W, Chung-Cheng C, Yi-Ting C, Wen-Chau L (2013) Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base_collector junction1. Jung-Hui T, Yu-Chi K, Hsuan HI, Tzu-Yen W (2006) Investigation of InP/InGaAs pnp δ doped heterojunction bipolar transistor with extremely low offset voltage. Jung-Hui T, Yu-Jui C (2005) Influence of spacer layer on InP/InGaAs δ-doped heterojunction bipolar transistors. John D (2003) Cressler, Goufu Niu, Silicon Germanium Heterojuntion Bipolar Transistors. In: Proceeding of XIXth international workshop on the physics of semiconductor and devices. Jena MR, Dash GN, Panda AK (2017) Effect of spacer layer in an InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor. J Semiconduct 34(5):054006ĭavid BS, Paul ME, James AH, Arthur SM, Robert JT (1994) Pnp HBT with 66 GHz f max. Ĭheng W, Wang Y, Zhao Y, Lu H, Gao H, Yang N (2013) A THz InGaAs/InP double heterojunction bipolar transistor with fmax D 325 GHz and BVCBO D 106 V. Now in the presence of InGaAsP cap layer the δ-doped charge sheet is varied from 2 × 10 11 cm −2 to 2 × 10 12 cm −2, and it is observed that it has little effect on these parameters except that the V CE,offset voltage decreases with increase in the sheet density.Ĭhen HR, Lee CP, Huang CH, Chang CY, Tsang JS, Tsai KL (1994) The application of delta-doping in heterojunction bipolar transistors. The unity gain cut-off frequency (f T) and the maximum frequency of oscillation (f max) are improved from 7.3 MHz to 5.4 GHz and 1.59–12.33 GHz respectively. The minimum noise figure is reduced from 7.3 to 3 dB. Some of the noteworthy results include increase in DC current gain from 50 to 126 and the Early voltage is improved from 7.96 V to 19.23 V. The device figures- of-merit are observed to be remarkable improved with the quaternary cap layer. The InGaAs cap layer is then replaced with InGaAsP. At the outset the simulation method is validated by comparing with experimental reported results. The effect of varying the cap layer and the δ doped charge sheet has been investigated for an InP based heterojunction bipolar transistor (HBT) using the SILVACO TCAD tool.
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